NEL (NTT)高性能电流直调激光器, 典型10Gbps速率, 波长1550nm或C波段, PMF保偏尾纤输出功率>1.0mW , SMA射频母头; 蝶形封装, 内部带制冷, 支持城域和长途应用, 以及10G以太网. 若需1310波段, 请咨询我们.
10Gbps DML DFB Laser, NEL (NTT) NLK1551SSC, 1550nm, Direct Modulated Laser
The NEL NLK1551SSC directly-modulated laser (DML) is a cost-effective solution for 10 Gb/s digital transmission of up to 50 km using traditional intra-city fiber links. The package contains a high-speed DFB laser chip, thermoelectric cooler, thermistor, optical isolator, and a rear-facet monitor photodiode for external optical power control.
Applications
- SONET/SDH low-cost metro applications
- High-speed data communications
- DWDM equipment drop-side applications
Features
- Direct-modulated 1550 nm laser module characterized for use in 10Gbps operations up to 40 km
- Average optical output power, 1mW min.
- SMA female RF connector
- Polarization maintaining fiber pigtail
- High relaxation frequency at low bias
- Temperature stabilized with internal thermoelectric cooler (TEC), enabling operation within a wide temperature range of –40 °C to +80 ° C
- Hermetically sealed optics, isolator on TEC
Electrical/Optical Characteristics
Table 2. Electrical and Optical Characteristics (Case Temperature, –40 °C to + 80 °C; Laser Temperature, 25 °C unless otherwise noted.)
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Average Optical Output Power | PO | IOP = ITH + 30 mA | 1 | — | — | mW |
| Threshold Current (BOL) | ITH | — | 2 | — | 30 | mA |
| Wavelength | λ | — | 1540 | 1551 | 1560 | nm |
| Wavelength Tuning Coefficient | ΔλT | — | — | 0.085 | — | nm/°C |
| External Efficiency | η | — | 0.125 | 0.15 | — | W/A |
| Side-mode Suppression Ratio | SMSR | IOP | 35 | — | — | dB |
| Chromatic Dispersion Penalty (50 km, SMF28, 200 ps/nm) | — | —1 | — | — | 1.0 | dB |
| Optical Isolation | — | — | 32 | — | — | dB |
| High-frequency Cutoff (3 dB) | FHIGH | IOP2 | 14 | — | — | GHz |
| Low-frequency Cutoff (3 dB) | FLOW | IOP2 | — | — | 30 | kHz |
| RF Return Loss, 50 Ω (0.1 GHz—8 GHz) | IS11I | IOP | 10 | — | — | dB |
| Rise/Fall Time, 10%—90% | tR/tF | —1 | — | — | 50 | ps |
| Thermoelectric Cooler Current | ITEC | — | — | — | 1.3 | A |
| Thermistor Resistance | RTH | — | 9.5 | 10 | 10.5 | kΩ |
| Thermistor Coefficient | — | — | — | –4.4 | — | %/°C |
| Monitor Photodiode Current | IMPD | IOP | 40 | — | 1500 | µA |
- 10Gbps PRBS 223–1, ER=8.2dB, @ IOP, TOP=25°C, typical 50mAp–p drive Current.
- Measurements made with 100μH in series with pin 3 (laser cathode).
Caution: Use of controls, adjustments, and procedures other than those specified herein may result in hazardous laser radiation exposure.
Absolute Maximum Ratings
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. RF input shall be ac coupled. It is recommended that a series inductor of 100 µH be placed external to the device on Pin 3.
| Parameter | Symbol | Condition | Min | Max | Unit |
| Operating Temperature Range | TOP | — | –40 | 80 | °C |
| Storage Case Temperature Range | Tstg | — | –40 | 85 | °C |
| Laser Forward Bias | — | TEC On | — | 150 | mA |
| Pin 3, Max. Positive Voltage1 | VR | — | — | 1 | V |
| Pin 3, Max. Positive Current1 | IR | — | — | 200 | mA |
| Reverse Voltage Photodiode | VRPD | — | — | 20 | V |
| TEC Current | ITEC | — | — | 1.7 | A |
